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一個(gè)碳化硅芯片業(yè)余愛好者的學(xué)習(xí)筆記。文獻(xiàn)整理，業(yè)界新聞，偶有所得，天馬行空。本公眾號(hào)屬于個(gè)人學(xué)習(xí)筆記，僅為個(gè)人業(yè)余興趣愛好，不涉及任何商業(yè)目的。文中如果有引用不規(guī)范的地方敬請(qǐng)見諒。有人的愛好是養(yǎng)花養(yǎng)草唱歌釣魚，也有人喜歡寫Twiter博客抖音，我最近幾年，喜歡周末偶爾讀點(diǎn)書刷刷paper，看看前沿方向材料和器件技術(shù)發(fā)展。
題記：做點(diǎn)有趣的事，做個(gè)有趣的靈魂。 最近和朋友們聊天，已經(jīng)有四五家的碳化硅溝槽MOSFET做了點(diǎn)樣品了。先不管能不能做產(chǎn)品，結(jié)構(gòu)好不好，但至少說明，碳化硅溝槽時(shí)代要來臨了……有朋友看了Peter Gammon- 對(duì)碳化硅未來'溝槽之戰(zhàn)'的文章，問我說，二堡你對(duì)八寸碳化硅溝槽MOS技術(shù)發(fā)展時(shí)代，特別是引入'微溝槽'技術(shù)之后，未來各種SiC基礎(chǔ)溝槽結(jié)構(gòu)IP的發(fā)展怎么看?哪些有專利問題，哪些有發(fā)展前途…先來個(gè)引子，畫了個(gè)匯總對(duì)比圖。后面有時(shí)間再慢慢分析探討。注意，咱討論的是幾種基礎(chǔ)結(jié)構(gòu)，不是各家公司開發(fā)中的專利結(jié)構(gòu)。這和咱們討論NAND存儲(chǔ)芯片的三種基礎(chǔ)結(jié)構(gòu)路線一樣，但NAND存儲(chǔ)芯片廠商有幾十家不同專利，但基礎(chǔ)結(jié)構(gòu)路線，就是東芝三星美光那三個(gè)。https://www./post/trench-warfare-a-sic-battlegroundTrench Warfare: A SiC BattlegroundThere is a split in the SiC industry between IDMs who are opting for conservative, safe planar MOSFET designs, and those who are pushing ahead with efficent, compact, trench MOSFET designs. While the planar designs appear to have the majority of the booming electric vehicle drivetrain inverter market today, cost pressures and marginal gains may in the near future bring trench deisgns to the fore. In this article we explain the different pros and cons of the two designs, their current commercial implications and the future outlook for these device.
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